Dual Metal‐Assisted Defect Engineering towards High‐Performance Perovskite Solar Cells

Perovskite solar cells (PSCs) have witnessed an unprecedentedly rapid development, especially in terms of power conversion efficiency (PCE). However, the solution-processed perovskite films inevitably possess numerous crystallographic defects (e.g., halide vacancies), which has been shown to incur non-radiative charge recombination and ion migration, thus limiting enhancement PCE stability PSCs. Here, a novel dual metal (i.e., divalent monovalent ions) modification strategy is reported for simultaneously reducing defects, immobilizing anions, preventing loss from during post-annealing process. Accordingly, this significantly reduces recombination, enhancing by ≈12% mitigating current density-voltage (J–V) hysteresis effect resultant devices compared undoped counterparts. As result, champion exceeding 22% high open-circuit voltage (Voc) 1.16 V obtained ions-modified The optimized also exhibit extended lifespan upon treatment. study provides new defect engineering toward more efficient stable photovoltaics.